PMGD290UCEAX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N/P-CH 20V 0.725A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 725mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
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Technische Details PMGD290UCEAX Nexperia USA Inc.
Description: NEXPERIA - PMGD290UCEAX - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 725 mA, 725 mA, 0.29 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 725mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 725mA, Drain-Source-Durchgangswiderstand, p-Kanal: 0.29ohm, Verlustleistung, p-Kanal: 445mW, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm, productTraceability: No, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 445mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (21-Jan-2025).
Weitere Produktangebote PMGD290UCEAX nach Preis ab 0.13 EUR bis 0.71 EUR
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PMGD290UCEAX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Case: SC88; SOT363; TSSOP6 Mounting: SMD Drain-source voltage: 20/-20V Drain current: 450/-320mA On-state resistance: 380/850mΩ Type of transistor: N/P-MOSFET Application: automotive industry Power dissipation: 0.99W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.68/1.14nC Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 3A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1155 Stücke: Lieferzeit 7-14 Tag (e) |
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PMGD290UCEAX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Case: SC88; SOT363; TSSOP6 Mounting: SMD Drain-source voltage: 20/-20V Drain current: 450/-320mA On-state resistance: 380/850mΩ Type of transistor: N/P-MOSFET Application: automotive industry Power dissipation: 0.99W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.68/1.14nC Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 3A |
auf Bestellung 1155 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD290UCEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.725A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 280mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 725mA, 500mA Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 8378 Stücke: Lieferzeit 10-14 Tag (e) |
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PMGD290UCEAX | Hersteller : Nexperia |
MOSFETs 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET |
auf Bestellung 10317 Stücke: Lieferzeit 10-14 Tag (e) |
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PMGD290UCEAX | Hersteller : NEXPERIA |
Description: NEXPERIA - PMGD290UCEAX - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 725 mA, 725 mA, 0.29 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 725mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 725mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.29ohm Verlustleistung, p-Kanal: 445mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm productTraceability: No Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 445mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 26999 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD290UCEAX | Hersteller : NEXPERIA |
Trans MOSFET N/P-CH 20V 0.725A/0.5A Automotive 6-Pin TSSOP T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |