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PMH1200UPEH

PMH1200UPEH Nexperia USA Inc.

PMH1200UPE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 520MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V
auf Bestellung 1203 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
91+0.19 EUR
139+0.13 EUR
159+0.11 EUR
188+0.094 EUR
250+0.085 EUR
500+0.08 EUR
1000+0.076 EUR
Mindestbestellmenge: 91 Stücke
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Technische Details PMH1200UPEH Nexperia USA Inc.

Description: MOSFET P-CH 30V 520MA DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 520mA (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V, Power Dissipation (Max): 380mW (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN0606-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V.

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PMH1200UPEH PMH1200UPEH Nexperia USA Inc. PMH1200UPE.pdf Description: MOSFET P-CH 30V 520MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMH1200UPEH PMH1200UPEH Nexperia PMH1200UPE.pdf MOSFETs SOT8001 P-CH 30V .52A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMH1200UPEH PMH1200UPE.pdf
PMH1200UPEH
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 520MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMH1200UPEH PMH1200UPE.pdf
PMH1200UPEH
Hersteller: Nexperia
MOSFETs SOT8001 P-CH 30V .52A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH