PMH550UNEAH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: PMH550UNEA/SOT8001/DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details PMH550UNEAH Nexperia USA Inc.
Description: PMH550UNEA/SOT8001/DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V, Power Dissipation (Max): 380mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN0606-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote PMH550UNEAH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
PMH550UNEAH | Hersteller : Nexperia |
MOSFETs 30 V, N-channel Trench MOSFET |
Produkt ist nicht verfügbar |