| Anzahl | Preis |
|---|---|
| 17+ | 0.17 EUR |
| 29+ | 0.1 EUR |
| 100+ | 0.077 EUR |
| 500+ | 0.072 EUR |
| 1000+ | 0.069 EUR |
| 2500+ | 0.065 EUR |
| 5000+ | 0.063 EUR |
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Technische Details PMH550UNEH Nexperia
Description: MOSFET N-CH 30V 770MA DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V, Power Dissipation (Max): 380mW (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN0606-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V.
Weitere Produktangebote PMH550UNEH
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMH550UNEH | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 770MA DFN0606-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 770mA (Ta) Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN0606-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V |
Produkt ist nicht verfügbar |
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PMH550UNEH | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 770MA DFN0606-3 Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: DFN0606-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 770mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |