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PMH950UPEH

PMH950UPEH Nexperia USA Inc.

PMH950UPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 530MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.068 EUR
20000+0.066 EUR
30000+0.065 EUR
Mindestbestellmenge: 10000
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Technische Details PMH950UPEH Nexperia USA Inc.

Description: MOSFET P-CH 20V 530MA DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 530mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V, Power Dissipation (Max): 370mW (Ta), 2.2W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN0606-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V.

Weitere Produktangebote PMH950UPEH nach Preis ab 0.067 EUR bis 0.19 EUR

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PMH950UPEH PMH950UPEH Hersteller : Nexperia PMH950UPE.pdf MOSFETs SOT8001 P CHAN 20V
auf Bestellung 7666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+0.19 EUR
25+0.12 EUR
100+0.088 EUR
500+0.084 EUR
1000+0.079 EUR
2500+0.074 EUR
10000+0.067 EUR
Mindestbestellmenge: 15
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PMH950UPEH PMH950UPEH Hersteller : Nexperia USA Inc. PMH950UPE.pdf Description: MOSFET P-CH 20V 530MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 44605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
137+0.13 EUR
158+0.11 EUR
187+0.095 EUR
250+0.086 EUR
500+0.081 EUR
1000+0.077 EUR
2500+0.073 EUR
5000+0.072 EUR
Mindestbestellmenge: 91
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PMH950UPEH Hersteller : NEXPERIA pmh950upe.pdf 20 V, P-channel Trench MOSFET
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PMH950UPEH Hersteller : NEXPERIA PMH950UPE.pdf PMH950UPEH SMD P channel transistors
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