PML260SN,118 NEXPERIA

Description: MOSFET N-CH 200V 8.8A DFN3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), Rds On (Max) @ Id, Vgs: 294mOhm @ 2.6A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: DFN3333-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 30 V.