
PMN100EPAX Nexperia USA Inc.

Description: MOSFET P-CH 60V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 660mW (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 616 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.19 EUR |
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Technische Details PMN100EPAX Nexperia USA Inc.
Description: MOSFET P-CH 60V 2.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V, Power Dissipation (Max): 660mW (Ta), 7.5W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 616 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote PMN100EPAX nach Preis ab 0.2 EUR bis 0.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PMN100EPAX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V Power Dissipation (Max): 660mW (Ta), 7.5W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 616 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 5942 Stücke: Lieferzeit 10-14 Tag (e) |
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PMN100EPAX | Hersteller : Nexperia |
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auf Bestellung 42188 Stücke: Lieferzeit 10-14 Tag (e) |
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PMN100EPAX | Hersteller : NEXPERIA |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.1ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) |
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PMN100EPAX | Hersteller : NEXPERIA |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.1ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) |
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PMN100EPAX | Hersteller : NEXPERIA |
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PMN100EPAX | Hersteller : NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.6A Pulsed drain current: -10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN100EPAX | Hersteller : NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.6A Pulsed drain current: -10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |