PMN25ENEAH

PMN25ENEAH Nexperia USA Inc.


PMN25ENEA.pdf Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR AUTOMOTI
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.1A, 10V
Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 597 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2994 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
38+0.47 EUR
100+0.32 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PMN25ENEAH Nexperia USA Inc.

Description: SMALL SIGNAL MOSFET FOR AUTOMOTI, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 6.1A, 10V, Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 597 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PMN25ENEAH

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PMN25ENEAH PMN25ENEAH Hersteller : Nexperia USA Inc. PMN25ENEA.pdf Description: SMALL SIGNAL MOSFET FOR AUTOMOTI
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.1A, 10V
Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 597 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH