PMPB07R0UNX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 20V 11.6A DFN2020M-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 11.6A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.38 EUR |
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Technische Details PMPB07R0UNX Nexperia USA Inc.
Description: MOSFET N-CH 20V 11.6A DFN2020M-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 11.6A, 4.5V, Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 10 V.
Weitere Produktangebote PMPB07R0UNX nach Preis ab 0.41 EUR bis 1.17 EUR
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PMPB07R0UNX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 11.6A DFN2020M-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 11.6A, 4.5V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 10 V |
auf Bestellung 3451 Stücke: Lieferzeit 21-28 Tag (e) |
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PMPB07R0UNX | Hersteller : Nexperia |
MOSFET PMPB07R0UN/SOT1220-2/DFN2020M- |
auf Bestellung 5063 Stücke: Lieferzeit 14-28 Tag (e) |
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