auf Bestellung 3000 Stücke:
Lieferzeit 84-98 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 0.97 EUR |
| 64+ | 0.82 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
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Technische Details PMPB08R6ENX Nexperia
Description: MOSFET N-CH 30V 11A DFN2020M-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V, Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V.
Weitere Produktangebote PMPB08R6ENX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| PMPB08R6ENX | Hersteller : NEXPERIA |
 Trans MOSFET N-CH 30V 11A 6-Pin DFN-M EP T/R |
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PMPB08R6ENX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 11A DFN2020M-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V |
Produkt ist nicht verfügbar |
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PMPB08R6ENX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 11A DFN2020M-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V |
Produkt ist nicht verfügbar |