Produkte > NEXPERIA USA INC. > PMPB09R1XNX
PMPB09R1XNX

PMPB09R1XNX Nexperia USA Inc.


PMPB09R1XN.pdf Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL MOSFETS FOR PORTABL
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 9.3A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details PMPB09R1XNX Nexperia USA Inc.

Description: SMALL SIGNAL MOSFETS FOR PORTABL, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 9.3A, 4.5V, Power Dissipation (Max): 1.5W (Ta), 21W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020M-6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V.

Weitere Produktangebote PMPB09R1XNX nach Preis ab 0.26 EUR bis 1.02 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMPB09R1XNX PMPB09R1XNX Hersteller : Nexperia USA Inc. PMPB09R1XN.pdf Description: SMALL SIGNAL MOSFETS FOR PORTABL
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 9.3A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
auf Bestellung 3151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 26
PMPB09R1XNX PMPB09R1XNX Hersteller : Nexperia PMPB09R1XN-3078658.pdf MOSFET MOS DISCRETES
auf Bestellung 2897 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.02 EUR
60+ 0.87 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.4 EUR
3000+ 0.34 EUR
9000+ 0.31 EUR
Mindestbestellmenge: 52