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PMPB10R3XNX

PMPB10R3XNX Nexperia USA Inc.

PMPB10R3XN.pdf
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL MOSFETS FOR PORTABL
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
auf Bestellung 2563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
33+0.55 EUR
100+0.37 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMPB10R3XNX Nexperia USA Inc.

Description: SMALL SIGNAL MOSFETS FOR PORTABL, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), Rds On (Max) @ Id, Vgs: 12.2mOhm @ 8.9A, 4.5V, Power Dissipation (Max): 1.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020M-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V.

Weitere Produktangebote PMPB10R3XNX nach Preis ab 0.31 EUR bis 1.01 EUR

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PMPB10R3XNX PMPB10R3XNX Hersteller : Nexperia PMPB10R3XN.pdf MOSFETs SOT1220 N-CH 30V 8.9A
auf Bestellung 2689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.01 EUR
10+0.63 EUR
100+0.42 EUR
500+0.31 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PMPB10R3XNX PMPB10R3XNX Hersteller : Nexperia USA Inc. PMPB10R3XN.pdf Description: SMALL SIGNAL MOSFETS FOR PORTABL
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
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Im Einkaufswagen  Stück im Wert von  UAH