| Anzahl | Preis |
|---|---|
| 4+ | 0.77 EUR |
| 10+ | 0.66 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.21 EUR |
| 9000+ | 0.19 EUR |
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Technische Details PMPB10XNE,115 Nexperia
Description: MOSFET N-CH 20V 9A DFN2020MD-6, Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMPB10XNE,115 nach Preis ab 0.49 EUR bis 1.25 EUR
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PMPB10XNE,115 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 20V 9A DFN2020MD-6Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2797 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB10XNE,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 9A DFN2020MD-6 Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
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