| Anzahl | Preis |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |
| 6000+ | 0.2 EUR |
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Technische Details PMPB11R2VPX Nexperia
Description: MOSFET P-CH 12V 9.7A DFN2020M-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 9.7A, 4.5V, Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 6 V.
Weitere Produktangebote PMPB11R2VPX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMPB11R2VPX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET P-CH 12V 9.7A DFN2020M-6Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9.7A, 4.5V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 6 V |
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