PMPB12R7EPX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
auf Bestellung 4615 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
28+ | 0.93 EUR |
100+ | 0.65 EUR |
500+ | 0.51 EUR |
1000+ | 0.41 EUR |
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Technische Details PMPB12R7EPX Nexperia USA Inc.
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V, Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN2020M-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V.
Weitere Produktangebote PMPB12R7EPX nach Preis ab 0.33 EUR bis 1.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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PMPB12R7EPX | Hersteller : Nexperia | MOSFET PMPB12R7EP/SOT1220-2/DFN2020M- |
auf Bestellung 3190 Stücke: Lieferzeit 14-28 Tag (e) |
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PMPB12R7EPX | Hersteller : NEXPERIA | Trans MOSFET P-CH 30V 8.7A 6-Pin DFN-M EP T/R |
Produkt ist nicht verfügbar |
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PMPB12R7EPX | Hersteller : Nexperia USA Inc. |
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V |
Produkt ist nicht verfügbar |