| Anzahl | Preis |
|---|---|
| 3+ | 1.07 EUR |
| 10+ | 0.66 EUR |
| 100+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.23 EUR |
| 9000+ | 0.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMPB12UNEX Nexperia
Description: MOSFET N-CH 20V 11.4A 6DFN, Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 470mW (Ta).
Weitere Produktangebote PMPB12UNEX nach Preis ab 0.49 EUR bis 1.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMPB12UNEX | Nexperia USA Inc. |
 Description: MOSFET N-CH 20V 11.4A 6DFNVgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2617 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PMPB12UNEX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 11.4A 6DFN
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 11.4A 6DFN
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2617 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.23 EUR |
| 24+ | 0.76 EUR |
| 50+ | 0.55 EUR |
| 100+ | 0.49 EUR |