auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
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Technische Details PMPB13XNE,115 Nexperia
Description: MOSFET N-CH 30V 8A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2195 pF @ 15 V.
Weitere Produktangebote PMPB13XNE,115 nach Preis ab 0.16 EUR bis 0.79 EUR
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PMPB13XNE,115 | Hersteller : Nexperia |
 Trans MOSFET N-CH 30V 8A 6-Pin DFN-MD EP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB13XNE,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 8A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2195 pF @ 15 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB13XNE,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 8A 6-Pin DFN-MD EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB13XNE,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 8A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2195 pF @ 15 V |
auf Bestellung 19714 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB13XNE,115 | Hersteller : Nexperia |
MOSFETs SOT1220 N CHAN 30V |
auf Bestellung 4870 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB13XNE,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 8A 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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| PMPB13XNE,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5A; Idm: 32A; ESD Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Pulsed drain current: 32A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 27mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB13XNE,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5A; Idm: 32A; ESD Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Pulsed drain current: 32A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 27mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |