PMPB30XPEX NEXPERIA

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A, Mounting: SMD, Case: DFN2020MD-6; SOT1220, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Gate charge: 19nC, Technology: Trench, Kind of channel: enhanced, Gate-source voltage: -12...8V, Pulsed drain current: -25A, Drain-source voltage: -20V, Drain current: -3.9A, On-state resistance: 52mΩ, Type of transistor: P-MOSFET, Polarisation: unipolar, Anzahl je Verpackung: 3000 Stücke.