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Technische Details PMPB30XPEX Nexperia
Description: PMPB30XPE/SOT1220/SOT1220, Input Capacitance (Ciss) (Max) @ Vds: 1517 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): +8V, -12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 34mOhm @ 6.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMPB30XPEX nach Preis ab 0.17 EUR bis 1.02 EUR
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PMPB30XPEX | Nexperia |
 Trans MOSFET P-CH 20V 6.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB30XPEX | Nexperia |
Trans MOSFET P-CH 20V 6.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 41900 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB30XPEX | Nexperia USA Inc. |
Description: PMPB30XPE/SOT1220/SOT1220 Input Capacitance (Ciss) (Max) @ Vds: 1517 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +8V, -12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2448 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMPB30XPEX |
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Hersteller: Nexperia
Trans MOSFET P-CH 20V 6.2A 6-Pin DFN-MD EP T/R
Trans MOSFET P-CH 20V 6.2A 6-Pin DFN-MD EP T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3985+ | 0.17 EUR |
| PMPB30XPEX |
|
Hersteller: Nexperia
Trans MOSFET P-CH 20V 6.2A 6-Pin DFN-MD EP T/R
Trans MOSFET P-CH 20V 6.2A 6-Pin DFN-MD EP T/R
auf Bestellung 41900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3985+ | 0.17 EUR |
| PMPB30XPEX |
|
Hersteller: Nexperia USA Inc.
Description: PMPB30XPE/SOT1220/SOT1220
Input Capacitance (Ciss) (Max) @ Vds: 1517 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +8V, -12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: PMPB30XPE/SOT1220/SOT1220
Input Capacitance (Ciss) (Max) @ Vds: 1517 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +8V, -12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2448 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 34+ | 0.63 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |