PMPB55XNEAX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 3.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.36 EUR |
6000+ | 0.34 EUR |
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Technische Details PMPB55XNEAX Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.8A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 3.8A, 4.5V, Power Dissipation (Max): 550mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote PMPB55XNEAX nach Preis ab 0.4 EUR bis 1.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PMPB55XNEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.8A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.8A, 4.5V Power Dissipation (Max): 550mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 7016 Stücke: Lieferzeit 21-28 Tag (e) |
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PMPB55XNEAX | Hersteller : Nexperia | MOSFET PMPB55XNEA/SOT1220/SOT1220 |
auf Bestellung 2976 Stücke: Lieferzeit 14-28 Tag (e) |
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Produkt ist nicht verfügbar |