PMPB95ENEA/FX NXP Semiconductors

Description: NEXPERIA PMPB95ENEA - 80 V, SING, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V.