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PMT200EPEX

PMT200EPEX Nexperia USA Inc.

PMT200EPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 70V 2.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.29 EUR
2000+0.26 EUR
3000+0.25 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMT200EPEX Nexperia USA Inc.

Description: MOSFET P-CH 70V 2.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V.

Weitere Produktangebote PMT200EPEX nach Preis ab 0.24 EUR bis 0.84 EUR

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Preis
PMT200EPEX PMT200EPEX Hersteller : Nexperia PMT200EPE.pdf MOSFETs PMT200EPE/SOT223/SC-73
auf Bestellung 26239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.8 EUR
10+0.65 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.27 EUR
2000+0.26 EUR
5000+0.24 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PMT200EPEX PMT200EPEX Hersteller : Nexperia USA Inc. PMT200EPE.pdf Description: MOSFET P-CH 70V 2.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V
auf Bestellung 3971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
26+0.69 EUR
100+0.47 EUR
500+0.39 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
PMT200EPEX PMT200EPEX Hersteller : NEXPERIA pmt200epe.pdf P-channel Trench MOSFET
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH