PMT200EPEX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 70V 2.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.41 EUR |
| 2000+ | 0.37 EUR |
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Technische Details PMT200EPEX Nexperia USA Inc.
Description: MOSFET P-CH 70V 2.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V.
Weitere Produktangebote PMT200EPEX nach Preis ab 0.41 EUR bis 1.5 EUR
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PMT200EPEX | Hersteller : Nexperia |
MOSFETs SOT223 P-CH 70V 2.4A |
auf Bestellung 15848 Stücke: Lieferzeit 10-14 Tag (e) |
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PMT200EPEX | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 70V 2.4A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V |
auf Bestellung 2288 Stücke: Lieferzeit 10-14 Tag (e) |
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PMT200EPEX | Hersteller : NEXPERIA |
P-channel Trench MOSFET |
auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
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PMT200EPEX | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A Case: SC73; SOT223 Mounting: SMD Drain-source voltage: -70V Pulsed drain current: -9.7A Drain current: -1.5A Gate charge: 15.9nC On-state resistance: 0.25Ω Gate-source voltage: ±20V Kind of package: reel; tape Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar |
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