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PMV15ENEAR

PMV15ENEAR Nexperia USA Inc.

PMV15ENEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 6.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.8A, 10V
Power Dissipation (Max): 700mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMV15ENEAR Nexperia USA Inc.

Description: MOSFET N-CH 30V 6.2A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 5.8A, 10V, Power Dissipation (Max): 700mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PMV15ENEAR nach Preis ab 0.17 EUR bis 0.42 EUR

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PMV15ENEAR PMV15ENEAR Hersteller : Nexperia USA Inc. PMV15ENEA.pdf Description: MOSFET N-CH 30V 6.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.8A, 10V
Power Dissipation (Max): 700mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 72325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
66+0.27 EUR
75+0.24 EUR
100+0.20 EUR
250+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
PMV15ENEAR PMV15ENEAR Hersteller : Nexperia PMV15ENEA.pdf MOSFETs 30 V, N-channel Trench MOSFET
auf Bestellung 19974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.42 EUR
12+0.26 EUR
100+0.20 EUR
500+0.19 EUR
1000+0.18 EUR
3000+0.17 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PMV15ENEAR PMV15ENEAR Hersteller : NEXPERIA pmv15enea.pdf 30 V, N-channel Trench MOSFET
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PMV15ENEAR Hersteller : NEXPERIA PMV15ENEA.pdf PMV15ENEAR SMD N channel transistors
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