| Anzahl | Preis |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
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Technische Details PMV16XNR Nexperia
Description: MOSFET N-CH 20V 6.8A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 510mW (Ta), 6.94W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMV16XNR nach Preis ab 0.36 EUR bis 0.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PMV16XNR | Nexperia USA Inc. |
 Description: MOSFET N-CH 20V 6.8A TO236ABInput Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 510mW (Ta), 6.94W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 2216 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMV16XNR |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 6.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 6.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2216 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 31+ | 0.57 EUR |
| 50+ | 0.41 EUR |
| 100+ | 0.36 EUR |