Produkte > NEXPERIA > PMV28ENEAR
PMV28ENEAR

PMV28ENEAR Nexperia


PMV28ENEA-1596142.pdf Hersteller: Nexperia
MOSFET PMV28ENEA/SOT23/TO-236AB
auf Bestellung 31343 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.6 EUR
10+0.45 EUR
100+0.32 EUR
500+0.25 EUR
1000+0.19 EUR
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PMV28ENEAR Nexperia

Description: MOSFET N-CH 30V 4.4A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V, Power Dissipation (Max): 660mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V, Qualification: AEC-Q101.

Weitere Produktangebote PMV28ENEAR nach Preis ab 0.23 EUR bis 0.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PMV28ENEAR PMV28ENEAR Hersteller : Nexperia USA Inc. PMV28ENEA.pdf Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
Power Dissipation (Max): 660mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
34+0.53 EUR
100+0.34 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
PMV28ENEAR PMV28ENEAR Hersteller : NEXPERIA pmv28enea.pdf 30 V, N-channel Trench MOSFET
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PMV28ENEAR Hersteller : NEXPERIA PMV28ENEA.pdf PMV28ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMV28ENEAR PMV28ENEAR Hersteller : Nexperia USA Inc. PMV28ENEA.pdf Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
Power Dissipation (Max): 660mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH