Produkte > NEXPERIA USA INC. > PMV30ENEAR
PMV30ENEAR

PMV30ENEAR Nexperia USA Inc.

PMV30ENEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 4.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.31 EUR
6000+ 0.3 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details PMV30ENEAR Nexperia USA Inc.

Description: MOSFET N-CH 40V 4.8A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V, Power Dissipation (Max): 710mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V.

Weitere Produktangebote PMV30ENEAR nach Preis ab 0.34 EUR bis 1.14 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMV30ENEAR PMV30ENEAR Hersteller : Nexperia USA Inc. PMV30ENEA.pdf Description: MOSFET N-CH 40V 4.8A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
auf Bestellung 11285 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
30+ 0.89 EUR
100+ 0.53 EUR
500+ 0.49 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 23
PMV30ENEAR Hersteller : NEXPERIA PMV30ENEA.pdf PMV30ENEAR SMD N channel transistors
Produkt ist nicht verfügbar