PMV32UP,215 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 20V 4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMV32UP,215 Nexperia USA Inc.
Description: MOSFET P-CH 20V 4A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 510mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V.
Weitere Produktangebote PMV32UP,215 nach Preis ab 0.25 EUR bis 0.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMV32UP,215 | Hersteller : Nexperia |
Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
PMV32UP,215 | Hersteller : Nexperia |
Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R |
auf Bestellung 25335 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
PMV32UP,215 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 2.4A, 4.5V Power Dissipation (Max): 510mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V |
auf Bestellung 3722 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
PMV32UP,215 | Hersteller : Nexperia |
MOSFETs PMV32UP/SOT23/TO-236AB |
auf Bestellung 213760 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
PMV32UP,215 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; 930mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Power dissipation: 930mW Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 73mΩ Mounting: SMD Gate charge: 15.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2796 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
|
PMV32UP,215 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; 930mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Power dissipation: 930mW Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 73mΩ Mounting: SMD Gate charge: 15.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2796 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
PMV32UP,215 | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
| PMV32UP,215 | Hersteller : NXP |
Trans MOSFET P-CH 20V 4A 3-Pin TO-236AB PMV32UP,215 TPMV32up Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| PMV32UP,215 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMV32UP,215 - MOSFET, P-KANAL, 20V, 4A, SOT23 tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 510mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.032ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2642 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
|
PMV32UP,215 Produktcode: 188518
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
|