PMV35EPER
Produktcode: 187543
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Gehäuse: SOT-23
Uds,V: 30 V
Id,A: 5,3 A
Rds(on),Om: 35 mOhm
Ciss, pF/Qg, nC: 793/12.8
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote PMV35EPER
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
PMV35EPER | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 5.3A TO236AB Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 480mW (Ta), 1.2W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
|
|
|
PMV35EPER | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 5.3A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Power Dissipation (Max): 480mW (Ta), 1.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V |
Produkt ist nicht verfügbar |
|
 |
PMV35EPER | Hersteller : Nexperia |
MOSFETs SOT23 P-CH 30V 5.3A |
Produkt ist nicht verfügbar |