| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.68 EUR |
| 100+ | 0.43 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.2 EUR |
| 9000+ | 0.17 EUR |
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Technische Details PMV50UPE,215 Nexperia
Description: MOSFET P-CH 20V 3.2A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 66mOhm @ 3.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMV50UPE,215 nach Preis ab 0.42 EUR bis 1.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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PMV50UPE,215 | Nexperia USA Inc. |
 Description: MOSFET P-CH 20V 3.2A TO236ABInput Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 3.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 4531 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMV50UPE,215 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.2A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.2A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 4531 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.07 EUR |
| 33+ | 0.65 EUR |
| 50+ | 0.48 EUR |
| 100+ | 0.42 EUR |