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PMV55ENEAR

PMV55ENEAR Nexperia


PMV55ENEA-2939006.pdf Hersteller: Nexperia
MOSFETs PMV55ENEA/SOT23/TO-236AB
auf Bestellung 400640 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.52 EUR
10+0.42 EUR
100+0.27 EUR
1000+0.2 EUR
3000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 6
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Technische Details PMV55ENEAR Nexperia

Description: MOSFET N-CH 60V 3.1A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Power Dissipation (Max): 478mW (Ta), 8.36W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PMV55ENEAR nach Preis ab 0.24 EUR bis 0.63 EUR

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Preis
PMV55ENEAR PMV55ENEAR Hersteller : Nexperia USA Inc. PMV55ENEA.pdf Description: MOSFET N-CH 60V 3.1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 478mW (Ta), 8.36W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
45+0.4 EUR
100+0.24 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
PMV55ENEAR Hersteller : NEXPERIA PMV55ENEA.pdf PMV55ENEAR SMD N channel transistors
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PMV55ENEAR PMV55ENEAR Hersteller : NEXPERIA 1747225512447091pmv55enea.pdf Trans MOSFET N-CH 60V 3.1A Automotive 3-Pin SOT-23 T/R
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PMV55ENEAR PMV55ENEAR Hersteller : Nexperia USA Inc. PMV55ENEA.pdf Description: MOSFET N-CH 60V 3.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 478mW (Ta), 8.36W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH