PMV55ENEAR NEXPERIA
Hersteller: NEXPERIA
Description: NEXPERIA - PMV55ENEAR - Leistungs-MOSFET, n-Kanal, 60 V, 3.1 A, 0.06 ohm, TO-236AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 478mW
Bauform - Transistor: TO-236AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (21-Jan-2025)
| Anzahl | Privatkunde |
|---|---|
| 287+ | 0.87 EUR |
| 481+ | 0.49 EUR |
| 741+ | 0.29 EUR |
| 1500+ | 0.2 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
287 Stücke
Produktrezensionen
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Technische Details PMV55ENEAR NEXPERIA
Description: MOSFET N-CH 60V 3.1A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Power Dissipation (Max): 478mW (Ta), 8.36W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote PMV55ENEAR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| PMV55ENEAR | Nexperia |
MOSFET 60V N-CHANNEL Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
PMV55ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 3.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 478mW (Ta), 8.36W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
PMV55ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 3.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 478mW (Ta), 8.36W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PMV55ENEAR | Nexperia |
MOSFETs PMV55ENEA/SOT23/TO-236AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PMV55ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12.6A; 8.36W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 12.6A Power dissipation: 8.36W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PMV55ENEAR | Nexperia |
Trans MOSFET N-CH 60V 3.1A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PMV55ENEAR |
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Hersteller: Nexperia
MOSFET 60V N-CHANNEL Транзистори
MOSFET 60V N-CHANNEL Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMV55ENEAR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 478mW (Ta), 8.36W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 478mW (Ta), 8.36W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PMV55ENEAR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3.1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 478mW (Ta), 8.36W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3.1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 478mW (Ta), 8.36W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMV55ENEAR |
|
Hersteller: Nexperia
MOSFETs PMV55ENEA/SOT23/TO-236AB
MOSFETs PMV55ENEA/SOT23/TO-236AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PMV55ENEAR |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12.6A; 8.36W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 12.6A
Power dissipation: 8.36W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12.6A; 8.36W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 12.6A
Power dissipation: 8.36W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMV55ENEAR |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 3.1A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 3.1A 3-Pin SOT-23 T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH