Technische Details PMV65ENEAR NEXPERIA
Description: MOSFET N-CH 40V 2.7A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V, Power Dissipation (Max): 490mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote PMV65ENEAR
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PMV65ENEAR | Hersteller : Nexperia |
 Trans MOSFET N-CH 40V 2.7A Automotive AEC-Q101 3-Pin SOT-23 T/R |
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PMV65ENEAR | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 2.7A Automotive AEC-Q101 3-Pin SOT-23 T/R |
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PMV65ENEAR | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 2.7A Automotive AEC-Q101 3-Pin SOT-23 T/R |
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PMV65ENEAR | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 2.7A Automotive AEC-Q101 3-Pin SOT-23 T/R |
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PMV65ENEAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 2.7A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V Power Dissipation (Max): 490mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 20 V Qualification: AEC-Q101 |
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PMV65ENEAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 2.7A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V Power Dissipation (Max): 490mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
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PMV65ENEAR | Hersteller : Nexperia |
MOSFETs SOT23 N-CH 40V 2.7A |
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PMV65ENEAR | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 1.7A Pulsed drain current: 11A Case: SOT23; TO236AB On-state resistance: 136mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Version: ESD |
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