PMV65XPER Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.8A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Produktrezensionen
Produktbewertung abgeben
Technische Details PMV65XPER Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.8A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 480mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V.
Weitere Produktangebote PMV65XPER
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
|
PMV65XPER | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.8A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V Power Dissipation (Max): 480mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PMV65XPER | Nexperia |
MOSFETs SOT23 P-CH 20V 2.8A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PMV65XPER | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -12A Case: SOT23; TO236AB On-state resistance: 114mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMV65XPER |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Description: MOSFET P-CH 20V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMV65XPER |
|
Hersteller: Nexperia
MOSFETs SOT23 P-CH 20V 2.8A
MOSFETs SOT23 P-CH 20V 2.8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PMV65XPER |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -12A
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -12A
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH