PMV74EPER

PMV74EPER Nexperia USA Inc.


PMV74EPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.8A, 10V
Power Dissipation (Max): 510mW (Ta), 6.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 356 pF @ 15 V
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details PMV74EPER Nexperia USA Inc.

Description: MOSFET P-CH 30V 2.8A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.8A, 10V, Power Dissipation (Max): 510mW (Ta), 6.4W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 356 pF @ 15 V.

Weitere Produktangebote PMV74EPER nach Preis ab 0.18 EUR bis 0.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMV74EPER PMV74EPER Hersteller : Nexperia USA Inc. PMV74EPE.pdf Description: MOSFET P-CH 30V 2.8A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.8A, 10V
Power Dissipation (Max): 510mW (Ta), 6.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 356 pF @ 15 V
auf Bestellung 11930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
38+ 0.47 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 30
PMV74EPER PMV74EPER Hersteller : Nexperia PMV74EPE-2938792.pdf MOSFET 30V P-CHANNEL
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.89 EUR
10+ 0.66 EUR
100+ 0.37 EUR
500+ 0.25 EUR
Mindestbestellmenge: 4
PMV74EPER Hersteller : NEXPERIA pmv74epe.pdf 30 V, P-channel Trench MOSFET
Produkt ist nicht verfügbar