PMV90ENE Nexperia
Produktcode: 215730
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Lieblingsprodukt
Hersteller: Nexperia
Gehäuse: SOT-23
Uds,V: 30 V
Idd,A: 3,7 A
Rds(on), Ohm: 54 mOhm
Ciss, pF/Qg, nC: 160/3,6
Bem.: 30 V, N-channel Trench MOSFET
JHGF: SMD
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote PMV90ENE nach Preis ab 0.16 EUR bis 17.88 EUR
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PMV90ENER | Nexperia USA Inc. |
Description: MOSFET N-CHANNEL 30V 3A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V Power Dissipation (Max): 460mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V |
auf Bestellung 1279 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV90ENER | Nexperia |
MOSFETs SOT23 N-CH 30V 3A |
auf Bestellung 174 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV90ENER | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 12A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.9A Case: SOT23; TO236AB On-state resistance: 0.118Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Version: ESD Gate charge: 5.5nC Pulsed drain current: 12A |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMV90ENER |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CHANNEL 30V 3A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 3A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
auf Bestellung 1279 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 46+ | 0.39 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| PMV90ENER |
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Hersteller: Nexperia
MOSFETs SOT23 N-CH 30V 3A
MOSFETs SOT23 N-CH 30V 3A
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.8 EUR |
| 10+ | 0.5 EUR |
| 50+ | 0.36 EUR |
| 100+ | 0.31 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.17 EUR |
| 6000+ | 0.16 EUR |
| PMV90ENER |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
Gate charge: 5.5nC
Pulsed drain current: 12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
Gate charge: 5.5nC
Pulsed drain current: 12A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |