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PMXB360ENEAZ

PMXB360ENEAZ Nexperia USA Inc.


PMXB360ENEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 1.1A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V
Power Dissipation (Max): 400mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.15 EUR
10000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMXB360ENEAZ Nexperia USA Inc.

Description: MOSFET N-CH 80V 1.1A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V, Power Dissipation (Max): 400mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN1010D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PMXB360ENEAZ nach Preis ab 0.16 EUR bis 0.60 EUR

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PMXB360ENEAZ PMXB360ENEAZ Hersteller : Nexperia USA Inc. PMXB360ENEA.pdf Description: MOSFET N-CH 80V 1.1A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V
Power Dissipation (Max): 400mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
44+0.40 EUR
100+0.23 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
PMXB360ENEAZ PMXB360ENEAZ Hersteller : Nexperia PMXB360ENEA.pdf MOSFETs 12 V, N-channel Trench MOSFET
auf Bestellung 44912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.60 EUR
10+0.43 EUR
100+0.25 EUR
500+0.21 EUR
1000+0.18 EUR
2500+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 5
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PMXB360ENEAZ PMXB360ENEAZ Hersteller : NEXPERIA 4373093179389934pmxb360enea.pdf Trans MOSFET N-CH 80V 1.1A Automotive AEC-Q101 3-Pin DFN-D EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
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PMXB360ENEAZ Hersteller : NEXPERIA PMXB360ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A; ESD
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 0.7A
On-state resistance: 887mΩ
Type of transistor: N-MOSFET
Case: DFN1010D-3; SOT1215
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Gate charge: 4.5nC
Technology: Trench
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 4.4A
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
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PMXB360ENEAZ Hersteller : NEXPERIA PMXB360ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A; ESD
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 0.7A
On-state resistance: 887mΩ
Type of transistor: N-MOSFET
Case: DFN1010D-3; SOT1215
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Gate charge: 4.5nC
Technology: Trench
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 4.4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH