| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.14 EUR |
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Technische Details PMZ130UNEYL Nexperia
Description: MOSFET N-CH 20V 1.8A DFN1006-3, Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-883, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 350mW (Ta), 6.25W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMZ130UNEYL nach Preis ab 0.3 EUR bis 0.77 EUR
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PMZ130UNEYL | Nexperia USA Inc. |
 Description: MOSFET N-CH 20V 1.8A DFN1006-3Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) |
auf Bestellung 7613 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMZ130UNEYL |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.8A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 1.8A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
auf Bestellung 7613 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 38+ | 0.47 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.3 EUR |