PMZ290UNE2YL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.2A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
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Technische Details PMZ290UNE2YL Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.2A DFN1006-3, Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-883, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 350mW (Ta), 5.43W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMZ290UNE2YL nach Preis ab 0.053 EUR bis 0.28 EUR
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PMZ290UNE2YL | Nexperia |
MOSFETs SOT883 N-CH 20V 1.2A |
auf Bestellung 33538 Stücke: Lieferzeit 10-14 Tag (e) |
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PMZ290UNE2YL | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1.2A DFN1006-3 Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 350mW (Ta), 5.43W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) |
auf Bestellung 90506 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMZ290UNE2YL | Nexperia |
N-канальний ПТ, Udss, В = 20, Id = 1,2 А, Ciss, пФ @ Uds, В = 46, Qg, нКл = 1,4, Rds = 320 мА, Ugs(th) = 950 мВ, Р, Вт = 5,43, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-883 Од. вим: шт Anzahl je Verpackung: 10000 Stücke |
verfügbar 10 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| PMZ290UNE2YL |
|
Hersteller: Nexperia
MOSFETs SOT883 N-CH 20V 1.2A
MOSFETs SOT883 N-CH 20V 1.2A
auf Bestellung 33538 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 0.26 EUR |
| 16+ | 0.18 EUR |
| 100+ | 0.12 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.072 EUR |
| 10000+ | 0.053 EUR |
| PMZ290UNE2YL |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.2A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 1.2A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
auf Bestellung 90506 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 93+ | 0.19 EUR |
| 148+ | 0.12 EUR |
| 500+ | 0.09 EUR |
| PMZ290UNE2YL |
|
Hersteller: Nexperia
N-канальний ПТ, Udss, В = 20, Id = 1,2 А, Ciss, пФ @ Uds, В = 46, Qg, нКл = 1,4, Rds = 320 мА, Ugs(th) = 950 мВ, Р, Вт = 5,43, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-883 Од. вим: шт
Anzahl je Verpackung: 10000 Stücke
N-канальний ПТ, Udss, В = 20, Id = 1,2 А, Ciss, пФ @ Uds, В = 46, Qg, нКл = 1,4, Rds = 320 мА, Ugs(th) = 950 мВ, Р, Вт = 5,43, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-883 Од. вим: шт
Anzahl je Verpackung: 10000 Stücke
verfügbar 10 Stücke: