PMZ350UPE/S500YL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PMZ350UPEY/L - 20V, P-Channel MO
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 0.95V @ 250µA
Power Dissipation (Max): 360mW (Ta), 3.13W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: SC-101, SOT-883
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| Anzahl | Preis |
|---|---|
| 8800+ | 0.07 EUR |
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Technische Details PMZ350UPE/S500YL Nexperia USA Inc.
Description: PMZ350UPEY/L - 20V, P-Channel MO, Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: DFN1006-3, Vgs(th) (Max) @ Id: 0.95V @ 250µA, Power Dissipation (Max): 360mW (Ta), 3.13W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Package / Case: SC-101, SOT-883, Packaging: Bulk, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.