Produkte > NEXPERIA USA INC. > PMZ600UNEYL
PMZ600UNEYL

PMZ600UNEYL Nexperia USA Inc.

PMZ600UNE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.058 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PMZ600UNEYL Nexperia USA Inc.

Description: MOSFET N-CH 20V 600MA DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-883, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V.

Weitere Produktangebote PMZ600UNEYL nach Preis ab 0.062 EUR bis 0.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PMZ600UNEYL PMZ600UNEYL Hersteller : Nexperia USA Inc. PMZ600UNE.pdf Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
auf Bestellung 13591 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
72+0.25 EUR
115+0.15 EUR
500+0.093 EUR
1000+0.082 EUR
2000+0.078 EUR
5000+0.063 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
PMZ600UNEYL PMZ600UNEYL Hersteller : Nexperia PMZ600UNE.pdf MOSFETs 20 V, N-channel Trench MOSFET
auf Bestellung 91552 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.42 EUR
11+0.27 EUR
100+0.17 EUR
500+0.1 EUR
1000+0.084 EUR
5000+0.069 EUR
10000+0.062 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PMZ600UNEYL Hersteller : NEXPERIA PMZ600UNE.pdf PMZ600UNEYL SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMZ600UNEYL PMZ600UNEYL Hersteller : NEXPERIA 4375085543312797pmz600une.pdf Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH