| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.46 EUR |
| 50+ | 0.3 EUR |
| 1000+ | 0.18 EUR |
| 2500+ | 0.14 EUR |
| 5000+ | 0.13 EUR |
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Technische Details PMZB1200UPEYL Nexperia
Description: MOSFET P-CH 30V 410MA DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 410mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V, Power Dissipation (Max): 310mW (Ta), 1.67W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1006B-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V.
Weitere Produktangebote PMZB1200UPEYL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PMZB1200UPEYL | Nexperia USA Inc. |
 Description: MOSFET P-CH 30V 410MA DFN1006B-3Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V |
auf Bestellung 1352 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1352 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PMZB1200UPEYL | Nexperia |
P-канальний ПТ, Udss, В = 30, Id = 410 мА, Ciss, пФ @ Uds, В = 43,2, Qg, нКл = 1,2, Rds = 1,4 Ом, Ugs(th) = 650 мВ, Р, Вт = 0,31, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: XFDFN-3 Од. вим: шт Anzahl je Verpackung: 10000 Stücke |
verfügbar 54 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| PMZB1200UPEYL |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 410MA DFN1006B-3
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V
Description: MOSFET P-CH 30V 410MA DFN1006B-3
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V
auf Bestellung 1352 Stücke:
Lieferzeit 10-14 Tag (e)
| PMZB1200UPEYL |
|
Hersteller: Nexperia
P-канальний ПТ, Udss, В = 30, Id = 410 мА, Ciss, пФ @ Uds, В = 43,2, Qg, нКл = 1,2, Rds = 1,4 Ом, Ugs(th) = 650 мВ, Р, Вт = 0,31, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: XFDFN-3 Од. вим: шт
Anzahl je Verpackung: 10000 Stücke
P-канальний ПТ, Udss, В = 30, Id = 410 мА, Ciss, пФ @ Uds, В = 43,2, Qg, нКл = 1,2, Rds = 1,4 Ом, Ugs(th) = 650 мВ, Р, Вт = 0,31, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: XFDFN-3 Од. вим: шт
Anzahl je Verpackung: 10000 Stücke
verfügbar 54 Stücke: