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PMZB1200UPEYL

PMZB1200UPEYL Nexperia


pmzb1200upe.pdf Hersteller: Nexperia
Trans MOSFET P-CH 30V 0.41A 3-Pin DFN-B T/R
auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.068 EUR
Mindestbestellmenge: 10000
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Technische Details PMZB1200UPEYL Nexperia

Description: MOSFET P-CH 30V 410MA DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 410mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V, Power Dissipation (Max): 310mW (Ta), 1.67W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1006B-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V.

Weitere Produktangebote PMZB1200UPEYL nach Preis ab 0.073 EUR bis 0.89 EUR

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PMZB1200UPEYL PMZB1200UPEYL Hersteller : Nexperia pmzb1200upe.pdf Trans MOSFET P-CH 30V 0.41A 3-Pin DFN-B T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.073 EUR
Mindestbestellmenge: 10000
PMZB1200UPEYL PMZB1200UPEYL Hersteller : Nexperia USA Inc. PMZB1200UPE.pdf Description: MOSFET P-CH 30V 410MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V
auf Bestellung 18013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
43+ 0.52 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 30
PMZB1200UPEYL PMZB1200UPEYL Hersteller : Nexperia PMZB1200UPE-2938709.pdf MOSFET PMZB1200UPE/SOT883B/XQFN3
auf Bestellung 18531 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
59+0.89 EUR
84+ 0.62 EUR
200+ 0.26 EUR
1000+ 0.16 EUR
10000+ 0.12 EUR
Mindestbestellmenge: 59
PMZB1200UPEYL PMZB1200UPEYL Hersteller : Nexperia pmzb1200upe.pdf Trans MOSFET P-CH 30V 0.41A 3-Pin DFN-B T/R
Produkt ist nicht verfügbar
PMZB1200UPEYL Hersteller : NEXPERIA PMZB1200UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006B-3; SOT883B
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
PMZB1200UPEYL PMZB1200UPEYL Hersteller : Nexperia USA Inc. PMZB1200UPE.pdf Description: MOSFET P-CH 30V 410MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V
Produkt ist nicht verfügbar
PMZB1200UPEYL Hersteller : NEXPERIA PMZB1200UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006B-3; SOT883B
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar