PMZB170VNEYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PMZB170VNE/SOT883B/XQFN3
Input Capacitance (Ciss) (Max) @ Vds: 66.4 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 820mV @ 250µA
Power Dissipation (Max): 340mW (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
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Technische Details PMZB170VNEYL Nexperia USA Inc.
Description: PMZB170VNE/SOT883B/XQFN3, Input Capacitance (Ciss) (Max) @ Vds: 66.4 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±6V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: SOT-883, Vgs(th) (Max) @ Id: 820mV @ 250µA, Power Dissipation (Max): 340mW (Ta), 3.5W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR).