PMZB320UPEYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 39+ | 0.46 EUR |
| 53+ | 0.33 EUR |
| 100+ | 0.29 EUR |
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Technische Details PMZB320UPEYL Nexperia USA Inc.
Description: MOSFET P-CH 30V 1A DFN1006B-3, Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: DFN1006B-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 350mW (Ta), 6.25W (Tc), Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMZB320UPEYL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| PMZB320UPEYL | Nexperia |
MOSFET P-CH 30V 1A DFN1006B-3 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
|
PMZB320UPEYL | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 1A DFN1006B-3 Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: DFN1006B-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PMZB320UPEYL | Nexperia |
MOSFETs SOT883 P-CH 30V 1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PMZB320UPEYL |
|
Hersteller: Nexperia
MOSFET P-CH 30V 1A DFN1006B-3 Транзистори
MOSFET P-CH 30V 1A DFN1006B-3 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMZB320UPEYL |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PMZB320UPEYL |
|
Hersteller: Nexperia
MOSFETs SOT883 P-CH 30V 1A
MOSFETs SOT883 P-CH 30V 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH