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PMZB350UPE,315

PMZB350UPE,315 Nexperia USA Inc.

PMZB350UPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.17 EUR
Mindestbestellmenge: 10000
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Technische Details PMZB350UPE,315 Nexperia USA Inc.

Description: MOSFET P-CH 20V 1A DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 3.125W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1006B-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V.

Weitere Produktangebote PMZB350UPE,315 nach Preis ab 0.14 EUR bis 1.14 EUR

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PMZB350UPE,315 PMZB350UPE,315 Hersteller : Nexperia PMZB350UPE-2938842.pdf MOSFET PMZB350UPE/SOT883B/XQFN3
auf Bestellung 13521 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
60+0.87 EUR
89+ 0.58 EUR
220+ 0.24 EUR
1000+ 0.18 EUR
2500+ 0.17 EUR
10000+ 0.15 EUR
20000+ 0.14 EUR
Mindestbestellmenge: 60
PMZB350UPE,315 PMZB350UPE,315 Hersteller : Nexperia USA Inc. PMZB350UPE.pdf Description: MOSFET P-CH 20V 1A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
auf Bestellung 15375 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
33+ 0.79 EUR
100+ 0.4 EUR
500+ 0.33 EUR
1000+ 0.24 EUR
2000+ 0.2 EUR
5000+ 0.19 EUR
Mindestbestellmenge: 23
PMZB350UPE,315 Hersteller : NEXPERIA PMZB350UPE.pdf PMZB350UPE.315 SMD P channel transistors
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