auf Bestellung 13521 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.16 EUR |
| 1000+ | 0.12 EUR |
| 2500+ | 0.11 EUR |
| 10000+ | 0.1 EUR |
| 20000+ | 0.092 EUR |
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Technische Details PMZB350UPE,315 Nexperia
Description: MOSFET P-CH 20V 1A DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 3.125W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1006B-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V.
Weitere Produktangebote PMZB350UPE,315 nach Preis ab 0.12 EUR bis 0.62 EUR
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PMZB350UPE,315 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET P-CH 20V 1A DFN1006B-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Power Dissipation (Max): 360mW (Ta), 3.125W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V |
auf Bestellung 20021 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMZB350UPE,315 | Hersteller : NEXPERIA |
PMZB350UPE.315 SMD P channel transistors |
Produkt ist nicht verfügbar |
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PMZB350UPE,315 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1A DFN1006B-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Power Dissipation (Max): 360mW (Ta), 3.125W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V |
Produkt ist nicht verfügbar |