| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.16 EUR |
| 1000+ | 0.12 EUR |
| 2500+ | 0.11 EUR |
| 10000+ | 0.1 EUR |
| 20000+ | 0.092 EUR |
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Technische Details PMZB350UPE,315 Nexperia
Description: MOSFET P-CH 20V 1A DFN1006B-3, Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: DFN1006B-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 360mW (Ta), 3.125W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMZB350UPE,315 nach Preis ab 0.12 EUR bis 0.62 EUR
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PMZB350UPE,315 | Nexperia USA Inc. |
 Description: MOSFET P-CH 20V 1A DFN1006B-3Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: DFN1006B-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 360mW (Ta), 3.125W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
auf Bestellung 20021 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMZB350UPE,315 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 20021 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 47+ | 0.38 EUR |
| 102+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.13 EUR |
| 5000+ | 0.12 EUR |