| Anzahl | Preis |
|---|---|
| 7+ | 0.46 EUR |
| 10+ | 0.28 EUR |
| 100+ | 0.12 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.09 EUR |
| 2500+ | 0.086 EUR |
| 5000+ | 0.072 EUR |
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Technische Details PMZB600UNEYL Nexperia
Description: MOSFET N-CH 20V 600MA DFN1006B-3, Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: DFN1006B-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc).
Weitere Produktangebote PMZB600UNEYL nach Preis ab 0.21 EUR bis 0.55 EUR
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PMZB600UNEYL | Nexperia USA Inc. |
 Description: MOSFET N-CH 20V 600MA DFN1006B-3Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: DFN1006B-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V |
auf Bestellung 3435 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMZB600UNEYL |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 600MA DFN1006B-3
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Description: MOSFET N-CH 20V 600MA DFN1006B-3
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
auf Bestellung 3435 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 53+ | 0.34 EUR |
| 74+ | 0.24 EUR |
| 100+ | 0.21 EUR |