
PN3563 TRE TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 12V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Supplier Device Package: TO-92-3
Description: 12V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Supplier Device Package: TO-92-3
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Technische Details PN3563 TRE TIN/LEAD Central Semiconductor Corp
Description: 12V 50MA 625MW TH TRANSISTOR-SMA, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V, Supplier Device Package: TO-92-3.
Weitere Produktangebote PN3563 TRE TIN/LEAD
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PN3563 TRE TIN/LEAD | Hersteller : Central Semiconductor | Bipolar Transistors - BJT 12V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator |
Produkt ist nicht verfügbar |