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PQMB11Z

PQMB11Z Nexperia USA Inc.

PQMB11.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP DFN1010B-6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3140 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
31+0.58 EUR
50+0.35 EUR
70+0.25 EUR
100+0.22 EUR
Mindestbestellmenge: 31 Stücke
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Technische Details PQMB11Z Nexperia USA Inc.

Description: TRANS PREBIAS 2PNP DFN1010B-6, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: DFN1010B-6, Resistor - Emitter Base (R2): 10kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 230mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).

Weitere Produktangebote PQMB11Z

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PQMB11Z PQMB11Z Nexperia USA Inc. PQMB11.pdf Description: TRANS PREBIAS 2PNP DFN1010B-6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PQMB11Z PQMB11Z Nexperia PQMB11.pdf Digital Transistors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PQMB11Z PQMB11.pdf
PQMB11Z
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP DFN1010B-6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PQMB11Z PQMB11.pdf
PQMB11Z
Hersteller: Nexperia
Digital Transistors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH