PQMD10Z Nexperia
Hersteller: Nexperia
Bipolar Transistors - BJT NPN/PNP resistor-equipped transistors; R1 = 47 kohm, R2 = 47 kohm
| Anzahl | Preis |
|---|---|
| 7+ | 0.47 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.12 EUR |
| 1000+ | 0.097 EUR |
| 5000+ | 0.081 EUR |
| 10000+ | 0.07 EUR |
| 25000+ | 0.067 EUR |
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Technische Details PQMD10Z Nexperia
Description: TRANS PREBIAS 1NPN 1PNP 6DFN, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: DFN1010B-6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Frequency - Transition: 230MHz, 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 230mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PQMD10Z nach Preis ab 0.11 EUR bis 0.49 EUR
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PQMD10Z | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6DFN Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: DFN1010B-6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 230MHz, 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 230mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 4354 Stücke: Lieferzeit 10-14 Tag (e) |
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PQMD10Z | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6DFN Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: DFN1010B-6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 230MHz, 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 230mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |