PQMH13Z

PQMH13Z Nexperia USA Inc.


PQMH13.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 50000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
6601+0.081 EUR
Mindestbestellmenge: 6601
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PQMH13Z Nexperia USA Inc.

Description: TRANS PREBIAS 2NPN DFN1010B-6, Qualification: AEC-Q101, Grade: Automotive, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 230mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR), Supplier Device Package: DFN1010B-6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 230MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V.

Weitere Produktangebote PQMH13Z

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PQMH13Z PQMH13Z Hersteller : Nexperia PQMH13-1320709.pdf Bipolar Transistors - Pre-Biased PQMH13/DFN1010B-6/REEL 7" Q2/T
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PQMH13Z PQMH13Z Hersteller : Nexperia USA Inc. PQMH13.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Qualification: AEC-Q101
Grade: Automotive
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PQMH13Z PQMH13Z Hersteller : Nexperia USA Inc. PQMH13.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH