
PQMH9Z Nexperia

Digital Transistors NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
auf Bestellung 3290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
6+ | 0.55 EUR |
10+ | 0.34 EUR |
100+ | 0.21 EUR |
500+ | 0.16 EUR |
1000+ | 0.12 EUR |
2500+ | 0.11 EUR |
5000+ | 0.088 EUR |
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Technische Details PQMH9Z Nexperia
Description: TRANS PREBIAS 2NPN DFN1010B-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 230mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V, Frequency - Transition: 230MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: DFN1010B-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote PQMH9Z
Foto | Bezeichnung | Hersteller | Beschreibung |
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PQMH9Z | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 230mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Frequency - Transition: 230MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: DFN1010B-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PQMH9Z | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 230mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Frequency - Transition: 230MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: DFN1010B-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |