PSC1065B1-QZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.52 EUR |
| 10+ | 5.62 EUR |
| 100+ | 3.96 EUR |
| 500+ | 3.36 EUR |
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Technische Details PSC1065B1-QZ Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 340pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: Die, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote PSC1065B1-QZ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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PSC1065B1-QZ | Nexperia USA Inc. |
Description: DIODE SIL CARBIDE 650V 10A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 340pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PSC1065B1-QZ |
|
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH