PSC20120JJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PSC20120J/SOT8018/TO263-2L
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1150pf @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tube
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK R2P
Produktrezensionen
Produktbewertung abgeben
Technische Details PSC20120JJ Nexperia USA Inc.
Description: PSC20120J/SOT8018/TO263-2L, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 1150pf @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Packaging: Tube, Current - Reverse Leakage @ Vr: 180 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: D2PAK R2P.