PSC20120JJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PSC20120J/SOT8018/TO263-2L
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1150pf @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK R2P
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.26 EUR |
| 10+ | 8.21 EUR |
| 50+ | 6.49 EUR |
| 100+ | 5.93 EUR |
| 500+ | 4.96 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
Produktrezensionen
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Technische Details PSC20120JJ Nexperia USA Inc.
Description: PSC20120J/SOT8018/TO263-2L, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1150pf @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: D2PAK R2P, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 180 µA @ 1200 V.